| abstract |
A first insulating film is formed on the integrated circuit chip on which the I / O pad is formed, and a first opening is formed on the I / O pad. On this first insulating film, a conductive layer and a barrier metal layer, which are electrically connected to the I / O pads through the first opening, are laminated. The conductive layer and the barrier metal layer are patterned in the same mask. A second insulating film is formed in a synthetic structure, and a second opening is formed at a position different from the first opening. Then, a hand bump or a metal pad is formed on the barrier metal layer in the second opening. The position of the hand bump or the metal pad is defined by the second opening. |