http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100226736-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b06cd22ab3bfbdca17825e5d731dee1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-951 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1996-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cb342a4df98697525404a47d7dc84f |
| publicationDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100226736-B1 |
| titleOfInvention | Isolation Area Formation Method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an isolation region of a semiconductor device, and in particular, to provide an easy planarization process while forming a void-free isolation layer in a trench after trench formation for forming a device isolation region of a GIGA level or more. The present invention relates to a method for forming an isolation region of a semiconductor device suitable for the following.n n n Such a method for forming an isolation region of a semiconductor device of the present invention comprises the steps of forming a first smoke film having a different width on the semiconductor substrate; Forming trenches of different widths in the semiconductor substrate using the first insulating layer; Forming a second insulating film over the trench and the first insulating film; Etching the second insulating layer to expose a portion of the first insulating layer; And etching the first insulating layer and the remaining second insulating layer by wet etching. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100622754-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100702776-B1 |
| priorityDate | 1996-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.