http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100224957-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 1996-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_468c80b1a60a96ac954393411b05c3c8
publicationDate 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100224957-B1
titleOfInvention Arrangement for enabling pin contact test of semiconductor device having clamp protection circuit and test method of semiconductor device
abstract The clamp circuit 10 clamping the potential of the internal node NA electrically connected to the external terminal 7 is controlled in accordance with the control signal IFG2 generated in the control circuit 30 in response to the monitor force mode activation signal TEST1 And the output of the pre-substrate generating circuit 15, which generates a predetermined internal voltage, is controlled by a control generated in the second control circuit 40 in response to the monitor force mode activation signal And selectively connected to the internal node (NA) in response to the signal.n n n By doing so, there is an effect that a pin contact test (pin contact test) and an external monitor of the internal potential and external application of the internal potential are realized in the semiconductor device provided with the clamp circuit for absorbing the surge voltage.
priorityDate 1995-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
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Total number of triples: 22.