http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100224729-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate | 1996-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_515445ec5f8d4d285c44354c578efe0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b925567066e425aa81ac8f0fd3ef427 |
| publicationDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100224729-B1 |
| titleOfInvention | Ferroelectric capacitor for semiconductor device and fabricating method thereof |
| abstract | Disclosed are a ferroelectric capacitor of a semiconductor device. According to the present invention, the lower electrode material of the ferroelectric capacitor is embedded in some or all of the contact holes. The buried depth is about 500 to 1000 mm from the surface of the interlayer insulating film. Therefore, the lower electrode of the present invention becomes thicker than 1000Å. When the lower electrode material is filled in only part of the contact hole, a recessed contact plug is formed between the semiconductor substrate and the lower electrode. A barrier film may be formed arbitrarily on the recessed contact plug. In such a structure, a misalignment occurs between the contact hole and the lower electrode, so that even if the contact hole region is exposed, the lower electrode material still exists in the exposed portion. Therefore, the contact plug material or the barrier film is not exposed to the oxygen atmosphere, thereby forming a non-conductive oxide film, and as a result, the contact resistance is prevented from increasing. The lower electrode material itself such as iridium is embedded in the entire contact hole by using the CVD method having excellent step coating properties. In the case of using the sputtering method, a recessed contact plug is formed and then a lower electrode is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1132949-A3 |
| priorityDate | 1996-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.