http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100223582-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-74 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-74 |
| filingDate | 1992-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c90f16481e30894306f5b4bf7c55ab70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_845f210296bdc99be0d9cc9efc2c4776 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34540164ac16a52bb892d19ea39e67c7 |
| publicationDate | 1999-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100223582-B1 |
| titleOfInvention | Method for manufacturing semiconductor device with SIMOX structure |
| abstract | The present invention relates to a method for manufacturing a semiconductor device formed by a so-called SIMOX technique for forming an SiO 2 buried layer by oxygen ion implantation in a silicon substrate.n n n In order to alleviate the damage on the silicon surface and to improve insulation separation characteristics, which is a problem in the prior art SiO 2 buried layer formation process, the present invention primarily injects oxygen ions into the semiconductor substrate, and secondly, phosphorus or boron ions or biboron ions. By simultaneously injecting and heat-treating to form a buried layer for insulation separation to be a PSG layer, a BSG layer or a BPSG layer, the amount of oxygen ion implantation can be considerably reduced compared to the conventional method, and thus damage to the semiconductor substrate can be reduced. Siege time can also be shortened. |
| priorityDate | 1992-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.