| abstract |
The present invention relates to a peeling solution composition for resists having a pH of 5 to 8 comprising (a) a salt of hydrofluoric acid and a metal-free base, (b) a water-soluble organic solvent, (c) water, and any (d) corrosion inhibitor. It is about. The method of peeling the resist includes (1) forming a resist layer on a substrate having a metal film, (2) exposing the resist layer through a mask pattern, developing the resist layer to form a resist pattern, and ( 3) dry-etching the substrate using the resist pattern as a mask, and peeling off the unnecessary resist and the modified resist film with the release liquid composition. |