http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100219486-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 1996-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7762c7eb5fda8bcebf7b177bed306e9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48b245d53a9332a5fd1cde8ac7a0de79 |
| publicationDate | 1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100219486-B1 |
| titleOfInvention | Method of forming oxide film and apparatus therefor |
| abstract | It describes a method of forming an oxide film and its length to obtain a high quality oxide film. An oxide film forming method of the present invention, 500 ℃ ~ 700 ℃ of O 2 + O 3 atmosphere and pre-oxidation step of thermally oxidizing the wafer in, of the wafer by performing the pre-oxidation step 900 ℃ ~ 1100 ℃ O 2 + O 3 , N 2 O, H 2 O comprises a main oxidation step of thermally oxidizing in the atmosphere, the forming apparatus is the bottom for pre-oxidizing the wafer and to the top for main oxidation of the pre-oxidized wafer A chamber comprising a chamber portion, a wafer loading portion for loading and unloading a wafer into the wing chamber portion, a driving portion for driving the wafer loading portion, and maintaining a vacuum pressure of the chamber portion and discharging residual gas after oxidation reaction to the outside. And a gas supply unit for supplying reactant gases for the sub-unit to the chamber unit. Therefore, according to the method and apparatus for forming an oxide film according to the present invention, by containing several atomic percent of nitrogen at the silicon substrate / oxide film interface to prevent diffusion of dopants from the silicon substrate, the TDDB characteristics are improved and strong O Oxygen and hydrogen defects in the formed oxide film are reduced due to the oxidizing power of 3 to enhance resistance to hot carriers, and a uniform oxide film is formed by preheating in an O 3 atmosphere. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100687410-B1 |
| priorityDate | 1996-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.