http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100217882-B1

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filingDate 1997-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c587507f177354e9f8b3f5d1f74c936d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5a15bc34a48edc26d460e270d7ca835
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publicationDate 1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100217882-B1
titleOfInvention Method for manufacturing field effect transistor type dissolved carbon dioxide sensor
abstract The present invention relates to a field effect transistor pH sensor manufactured through a semiconductor device manufacturing process, and more particularly to a method for manufacturing a field effect transistor type dissolved carbon dioxide partial pressure sensor for measuring the dissolved carbon dioxide partial pressure in an aqueous solution or blood using a pH sensor. It is about. Features of the present invention include a silicon substrate 1, a source region 2, a drain region 3, a silicon oxide layer 4, a silicon nitride pH sensing layer 5, an aluminum metal electrode 6, a reference electrode 7 ), The FET type carbon dioxide sensor composed of the hydrogel film 8 and the gas permeable membrane 9 forms a hydrogel film and a gas permeable membrane by using a photopolymerizable photosensitive polymer. It is to prevent the polymerization by the action so that they have a double-membrane structure, the hydrogel film is formed by using a hydrophilic acrylamide and hydroxyethyl methacrylate (HEMA) excellent in patterning properties at the same time. The carbon dioxide partial pressure sensor manufactured by the present invention can solve the problem of pinhole generation and irregular surface generation and irregular surface generation in the sensing film due to the use of the conventional mylar film, and also has the advantage of easy adjustment of the thickness of the sensing film. Will be.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111919112-A
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priorityDate 1997-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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