| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1996-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eddde1a2ea142bbeb05292861d525489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd1e0351acfc94444d7844d93df1ae7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b710ca84efe998d51484933d11999b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3c090302d97b97f572f77a1e270b6fc |
| publicationDate |
1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100209371-B1 |
| titleOfInvention |
Method for forming micropattern of far-infrared photosensitive film and semiconductor device |
| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a micropattern of an ultraviolet-ray photosensitive film and a semiconductor device, and more particularly, in a lithography process using an ArF laser as a light source during a manufacturing process of a highly integrated semiconductor device having 1 giga or 4 g DRAM P-M.A. (Poly-Methyl-Meth-Acrylate, hereinafter referred to as PMMA) is used as a basic skeleton to bind proline or indole moieties to improve etch resistance and transmittance. (Post Exposure Delay, hereinafter referred to as PED) It is to develop a photosensitive film for ultraviolet rays with improved stability, and to form a fine pattern sufficient for high integration of semiconductor devices by using the ultraviolet photosensitive film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102165097-B1 |
| priorityDate |
1996-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |