http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100208448-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1996-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46e1eb32a2c8041dc63e7d78366437ea |
| publicationDate | 1999-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100208448-B1 |
| titleOfInvention | Method for forming interlayer insulating film of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an interlayer insulating film of a semiconductor device, and to completely remove moisture after forming an SOG film to prevent defects caused by the release of moisture contained in a spin-on-glass film. By forming a second interlayer insulating film on the SOG film using electric power, the layer covering of the metal is improved in the contact hole, and the self-resistance of the metal layer is reduced, so that the electrical characteristics of the device can be improved. It relates to a formation method. |
| priorityDate | 1996-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.