http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100206288-B1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62fd8c278b5b9d6fb72a4d088cfa2deb
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-2272
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J29-18
filingDate 1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5171637cf6a2a93188814549a45a98a
publicationDate 1999-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100206288-B1
titleOfInvention High Brightness Low Temperature Shadow Mask of Cathode Ray Tube, Screen Manufacturing Method Thereof and Cathode Ray Tube
abstract Disclosed are a shadow mask of a cathode ray tube, a screen manufacturing method thereof, and a cathode ray tube thereof, in which a connection function is added to enlarge a size of a passage hole of an electron beam. A first thin plate metal body 51 having a predetermined shape according to the panel, and having a plurality of electron beam through holes formed therein and to which a predetermined first DC voltage is applied; It has a predetermined shape in accordance with the shape of the first thin plate metal body at a predetermined distance from the first thin plate metal body, and the plurality of the plurality of electrons on the electron beam central axis passing through the plurality of electron beam through holes of the first thin plate metal body A second thin plate to which an equal number of electron beam through holes is formed, and a second direct current voltage is applied such that an electron beam passing through the electron beam through holes forms a connection lens between the first direct voltage of the first thin plate metal body A metal body 53 is provided. The screen manufacturing method of the cathode ray tube is characterized in that the size of the development area is controlled by controlling the particles of the phosphor fine powder charged in any one of the exposed portion and the remaining non-exposed portion where the electrostatic charge is selectively released in the exposure step. The developing step of attaching while adjusting the. Accordingly, a large amount of electron beams pass through the high brightness low temperature shadow mask, and only a very small amount collides with the high brightness low temperature shadow mask, so that the luminance can be greatly increased even at a low power capacity without degrading color purity.
priorityDate 1995-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.