http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100205068-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10329 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1995-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7519952828315568b8424810cabfa75d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4d680cc6950059c4499b989cc7a97f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b73664bbddb82b54e93bcd162dec44a4 |
| publicationDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100205068-B1 |
| titleOfInvention | Metal-Semiconductor Field Effect Transistors |
| abstract | The present invention relates to a metal-semiconductor field effect transistor, comprising a semiconductor substrate of semi-insulating gallium arsenide, a first buffer layer made of gallium arsenide without an impurity doped on the semiconductor substrate, and impurities on top of the first buffer layer. A third buffer layer comprising a second buffer layer comprising a superlattice structure of a well of undoped gallium arsenide and an aluminum gallium arsenide barrier not doped with impurities, and a gallium arsenide without impurities doped on the second buffer layer; And a cap layer made of gallium arsenide doped with silicon formed on the third buffer layer and a gallium arsenide doped with silicon formed on the channel layer. Therefore, the present invention can reduce the power consumption by lowering the knee voltage characteristics, improve the transmission conductance, and the operating range of the device is wide because the conduction characteristics act in a wide range against the change of voltage. |
| priorityDate | 1995-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.