| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1995-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c36d3b61c54c28cce1aef7bce4c17361 |
| publicationDate |
1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100200023-B1 |
| titleOfInvention |
Semiconductor integrated circuit device with wiring structure effective for migration and mask misalignment and manufacturing method |
| abstract |
A wiring structure included is formed on the insulating layer and includes an aluminum-based metal strip extending on the insulating layer and a high melting point metal barrier layer covering the aluminum-based metal strip to prevent electro-migration in the aluminum-based metal layer; The two-level barrier layer has fin portions extending along both sides of the aluminum-based metal layer, which prevent the increase in contact resistance due to misalignment in the wiring structure. |
| priorityDate |
1994-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |