http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100195606-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 |
| filingDate | 1995-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bee9d9d633b090ff03f555a9998f6fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f70c27b94afd6034bf92bcd71961e5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd6fc91c50ec699ba94973b4d5a49b02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e843160052982d6caf1107753b475f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201a4ef438d2fc2f1c40e69f59df47ec http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fe3fe2766cec1220ce8153a5901c022 |
| publicationDate | 1999-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100195606-B1 |
| titleOfInvention | Semiconductor memory device and driving method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory device and a driving method thereof, wherein an operation of replacing a defective memory cell of a main body memory cell part with a memory cell of a redundant memory cell part and storing the address data when necessary is performed without using a special device. It is an object of the present invention to provide a semiconductor memory device capable of performing a high speed operation of a redundant memory cell selection circuit, and a driving method thereof. The memory cell unit 11, the redundant memory cell unit 12, and the main body of the main body are provided. A redundant address data cell section 17, a control circuit section 15, and a redundant memory cell selection circuit section, each of which comprises a nonvolatile semiconductor memory for electrically storing an address of a redundant memory cell in which a defective memory cell of the memory cell section 11 is replaced. The semiconductor memory device and the redundancy memory selection circuit section 16 comprising the redundancy address data cell section 17 are provided. The first address data read out from the data base, and the first address data is compared with the second address data for reading or writing inputted through the control circuit section 15, and then the main body memory cell section 11 is compared. Alternatively, the redundant memory cell unit 12 may be selected. |
| priorityDate | 1994-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID450646340 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID176015 |
Total number of triples: 23.