http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100186272-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3593a13cc4ab7079f7a69ef885b5a005 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-399 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J3-433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-3504 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J3-433 |
| filingDate | 1995-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cfd6f40180f25f8dc26a66cd7c52fdb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f1715d3ee8da81bddefc8298be074d6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04aa99d4cd22fede0336043c10b7874c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bbb3087a3f09e1aaba25015eb2dc0cd |
| publicationDate | 1999-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100186272-B1 |
| titleOfInvention | Infrared spectroscopic analysis of gases and apparatus used therein |
| abstract | The present invention relates to a method and apparatus for measuring a small amount of impurity concentration in a gas to be measured by an infrared spectroscopic analysis method using a semiconductor laser.n n n The gas to be measured flows through the sample cell 5 and is decompressed by the exhaust pump 16 for high sensitivity and accurate analysis. The infrared laser in the wavelength region from which the strong absorption peak by the impurity is obtained from the semiconductor laser 1 is oscillated, and only the sample cell 5 and the reference cell 8 in which the impurity is enclosed are transmitted to measure the differential absorption spectrum.n n n By comparing a spectrum of the gas to be measured and a spectrum of only impurities, impurities are confirmed by determining a plurality of absorption peaks related to impurities, and impurities are quantified from the absorption intensity of the strongest peak. When impurity gas molecules form clusters in the gas under test, light is emitted at 0.5 eV or more and analysis is performed in a state where the clusters are dissociated. The present invention is particularly preferable for analyzing trace impurities in the semiconductor material gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160063704-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100793867-B1 |
| priorityDate | 1994-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.