http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0185298-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e51157a0ab8aaa3d39620a9ca3cda42 |
| publicationDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0185298-B1 |
| titleOfInvention | Method of forming contact hole filling plug in semiconductor device |
| abstract | The present invention provides a method for forming a contact hole filling plug in a semiconductor device in which a dummy pattern is formed in order to prevent misalignment caused by exposure equipment that occurs when a predetermined contact hole and a metal wiring are formed in the semiconductor device.n n n In order to achieve the above object, a method of forming a contact hole according to the present invention includes sequentially forming an interlayer insulating film, a first metal wiring, and a planarization insulating film on a semiconductor substrate, and depositing a nitride film with a predetermined thickness on an upper portion of the planarization insulating film. Forming a nitride film pattern having a predetermined width, depositing a transition metal film having a predetermined thickness on the entire surface, etching until the nitride film is exposed, and exposing the nitride film pattern above the first metal wiring of the nitride film pattern exposed by etching. Forming a contact hole by anisotropically etching the exposed nitride film and the planarization insulating film using the photoresist mask pattern as an etch barrier until the first metal wiring is exposed, and removing the photoresist film. Forming a plug to fill the hole; a second electrically connected to the plug or the transition metal film Forming a metal wiring is characterized in that it comprises a. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100655427-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100421280-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100368973-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100429112-B1 |
| priorityDate | 1995-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.