http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0180328-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1995-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a60fa9a5d5e2ed4559dae1c6a8beb11 |
| publicationDate | 1999-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0180328-B1 |
| titleOfInvention | How to measure plug resistance and interface resistance separately and its test pattern |
| abstract | The test resistance test pattern including the plug resistance and the interface resistance includes a contact hole region and a first to fourth electrode pad pattern connected to the contact hole region. The contact hole regions may be spaced apart from each other on the first and second semiconductor region patterns via the insulating layer, and provided on the first and second semiconductor region patterns through the insulating layer to have the same resistance and have the same resistance. It includes a first and second gold valley pattern overlapping. The contact hole region may have a plug structure having the same diameter, and may further include first and second contact holes filled with a conductive material and connecting the first semiconductor region pattern and the first and second metal patterns. do. The first and second contact holes have first and second depths, respectively. In addition, the contact hole region may have a plug structure having the same diameter, and may further include third and fourth contact holes filled with a conductive material and connecting between the second semiconductor region pattern and the first and second metal patterns. do. The third and fourth contact holes have second and first depths, respectively. The fifth and sixth contact holes connect between the first and second semiconductor region patterns and the first and second electrode pad patterns, respectively. The third and fourth electrode pad patterns are connected to the first and second metal patterns, respectively. |
| priorityDate | 1994-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23985 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID482532689 |
Total number of triples: 23.