http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0179656-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1990-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_186683933a7e72bc71532e2575e871e1 |
| publicationDate | 1999-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0179656-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The semiconductor device of the present invention includes an insulating film on a semiconductor substrate, first and second conductive gate electrode films, and first and second sources / drains having impurities and disposed to face each other. The length of the second gate electrode is smaller than the first gate length. The semiconductor device further includes sidewall insulating films formed in both transverse directions of the gate electrode. The semiconductor device comprises forming an insulating film, a first and a second conductive film, a MOS transistor gate electrode on a substrate, performing thermal annealing on the gate electrode, and forming a first and second substrate on the substrate using the gate electrode as a mask. By ion implantation of impurities. The semiconductor device manufacturing method of the present invention further includes performing anisotropic etching to form a sidewall insulating film. |
| priorityDate | 1989-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.