http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0175011-B1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4558 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate | 1995-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1999-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 1999-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-0175011-B1 |
titleOfInvention | Method of manufacturing titanium nitride thin film |
abstract | A novel method of manufacturing titanium nitride thin films is disclosed.n n n A metal organic source is supplied, and a gas which does not directly react with the metal organic source is used as a gas for generating plasma to generate a non-reactive radical which does not vapor-react with the metal organic source in a remote manner. Irreactive radicals are irradiated to form titanium nitride thin films. By generating non-reactive radicals, it is possible to suppress the formation of intermediate products and particulates, to remove C-H groups and to improve step coatability. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8257799-B2 |
priorityDate | 1995-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.