http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0171665-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C65-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 1995-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f08ea87295ed56b59dae70df070c234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d405240566ae4a2ca3c540c359a3814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2659735b63ca975a440026ec8b41cca4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d69c4ffbbdbd259094e39eeaea1975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11afba3cb21b2f665bb1b91dad62e33d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f7a63355a9f1efe7c33636d12f0de75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_436ce5a101e24a6b46c586b495a8187e |
| publicationDate | 1999-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0171665-B1 |
| titleOfInvention | Method of forming patterned resist layer on substrate |
| abstract | Improved chemically amplified positive resist compositions for radiation, in particular ultraviolet light, deep ultraviolet light, excimer laser beams, X-rays, electron beams are disclosed.n n n The composition comprises a compound (B) and an organic carboxylic acid compound (C) which generate an acid upon irradiation with a resin component (A) which has increased solubility in an aqueous alkali solution due to the action of an acid, wherein the resin component (A) (a) polyhydroxystyrene in which about 10-60 mole% of the hydroxyl groups are substituted with the residue of general formula (I); Andn n n n n n n n Wherein R 1 is a hydrogen atom or a methyl group, R 2 is a methyl group or an ethyl group, and R 3 means a lower alkyl group having 1 to 4 carbon atoms.n n n (b) polyhydroxy styrene in which about 10-60 mole percent of the hydroxyl groups are motivated by tert-butoxycarbonyloxy groups; It is a mixture consisting of.n n n The composition has a high sensitivity, high resolution, high flame resistance, good width characteristics at depth of focus, good post-exposure storage stability, good storage stability as a resist solution, and a resist pattern having a good profile without dependence on the substrate to which it is applied. Grant.n n n This composition can be advantageously used for micropattern formation in ultra-LSI production. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100417788-B1 |
| priorityDate | 1994-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 244.