http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0169271-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-06783
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-067
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
filingDate 1994-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03cd372c5fb26c7aef41b9248121dfef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91600a4162e2bfb9f0530d09cee8ac5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58cbb773b7b4b1596cf394abd01c6156
publicationDate 1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-0169271-B1
titleOfInvention Device for evaluating semiconductor device characteristics and method for evaluating semiconductor device characteristics using the device
abstract The present invention simply and stably obtains electrical contact between the pad and the measuring needle in the evaluation of the characteristics of the semiconductor device.n n n Each measuring needle (1-2) has a metal needle-like structure and is disposed in correspondence with each electrode position of the LSI to be the object to be measured, and at the distal end thereof, a metal melt mainly composed of gallium is used. Maintained. Each measuring needle 1-2 is supported by the support substrate 1-1. Each measuring needle 1-2 is connected to a measuring device 1-5 for evaluating the characteristics of the LSI via the wiring 1-4.
priorityDate 1993-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.