http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0166487-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 1993-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e51157a0ab8aaa3d39620a9ca3cda42 |
| publicationDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0166487-B1 |
| titleOfInvention | Semiconductor MOSFET Manufacturing Method |
| abstract | The present invention relates to a method for manufacturing a semiconductor MOSFET, by forming a silicide on the top of the source / drain electrode to be connected to the metal wiring to prevent the spiking phenomenon to extend to the top of the field oxide film and to exist in the source / drain electrode and the metal wiring The present invention relates to a method of reducing the step difference between a silicon substrate and a gate electrode by using a virtual field oxide film while increasing the margin of connection with the film. |
| priorityDate | 1993-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.