http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0157373-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B7-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B7-06 |
| filingDate | 1996-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1999-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30bc427499d9c0e80efbfc74ca44a1c3 |
| publicationDate | 1999-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0157373-B1 |
| titleOfInvention | Corona discharge gun |
| abstract | A method of measuring the thickness of very thin oxide layers on a silicon substrate. The corona discharge source repeatedly deposits a constant charge density adjusted on the surface of the oxide layer. The resulting change in oxide surface potential is measured for each charge deposit.n n n By selecting a starting value for the assumed oxide layer thickness, an approximate change in silicon band bending per corona discharge step is determined. The cumulative changes in band bending against oxide layer surface potential yield experimental band bending characteristics for bias. Theoretical band bending characteristics for bias are set. The experimental and theoretical properties are consistent at their predetermined points, and the assumed oxide layer thickness is then repeated until the two properties overlap in the silicon accumulation region. The repeated oxide layer thickness that allows the two properties to overlap is the oxide layer thickness to be found.n n n The final experimental properties obtained are also used to determine the interfacial density of the oxide layer. Specially designed corona discharge guns have been described for use in oxide layer thickness and interface state density measurement techniques. |
| priorityDate | 1995-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.