http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0155314-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0455894a3bd6ed1302b8fd893e157fc
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
filingDate 1995-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1998-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_759e05f17f6ac72f3bc6a4550a85f59c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_952738c2bd7ea3b12a4bb1b16075e13f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0573cbabeb1d93441afd130f9cbe4321
publicationDate 1998-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-0155314-B1
titleOfInvention Metal liner flattening device using plasma surface treatment
abstract The present invention relates to a planarization equipment for a wiring metal thin film using a plasma surface treatment in a semiconductor manufacturing process. The surface treatment by the plasma of the deposited metal thin film, the contact window and the via hole enables the removal of impurities and oxides on the surface of the substrate or the thin film. And precise temperature control is possible, and it is installed on the upper part of the reactor in order to perform reflow heat treatment by heating after metal thin film deposition and pretreatment process of contact window and via simultaneously or sequentially in one reactor. It has high ionization rate and low plasma potential, so there are few contaminants from the reactor and small ion energy incident on the wafer, so that TCP (Transformer Coupled Plasma) can be used as a plasma source to minimize damage to contact windows and via holes. A plasma cleaning module; A substrate heating module for heating the wafer holder assembly by an external lamp and a reflector for reflecting efficiency and temperature uniformity to enable heat treatment of the substrate by an indirect heating method; A vacuum module including a vacuum exhaust port on one side of the reactor for maintaining the vacuum of the reactor; It is characterized by consisting of a wafer transfer module having a wafer holder drive mechanism, a drive shaft and bellows as a component.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170102771-A
priorityDate 1995-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758

Total number of triples: 22.