http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0154287-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 1995-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_180c1fe8e94efae5d9477e916beeb479 |
| publicationDate | 1998-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0154287-B1 |
| titleOfInvention | Gate electrode formation method of semiconductor device |
| abstract | The present invention discloses a method for forming a gate electrode of a semiconductor device.n n n The present invention improves the reliability of the gate electrode formed using in-situ phosphor doped polysilicon, which is superior to the gate electrode formed using conventional POCl 3 doping in terms of simplicity and ease of subsequent processes. In order to increase the deposition temperature to a temperature between 580 to 620 ℃ the poly grain starts to form, it is possible to improve the reliability by reducing the stress appearing when the phase transition by the subsequent thermal process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190101736-A |
| priorityDate | 1995-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.