http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0152009-B1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 1995-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1998-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d7553b249b3632974346bc3d101edca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11afba3cb21b2f665bb1b91dad62e33d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d69c4ffbbdbd259094e39eeaea1975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2659735b63ca975a440026ec8b41cca4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f7a63355a9f1efe7c33636d12f0de75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9be3a35893def44b079af9784b7d186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0873750b5ddc9495ae3ba37e6c13c1a |
publicationDate | 1998-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-0152009-B1 |
titleOfInvention | Positive resist composition |
abstract | Improved, chemically amplified positive resist compositions for radiation, in particular ultraviolet light, deep ultraviolet light, excimer laser beams, X-rays, electron beams are disclosed.n n n The composition comprises a resin component (A) in which solubility in an alkaline aqueous solution is increased by the action of an acid, a compound (B) which generates an acid upon irradiation, and an organic carboxylic acid compound (C), wherein the resin component (A ) Is (a) polyhydroxystyrene in which about 10-60 mole% of the hydroxyl groups are substituted with residues of the general formula (I) below; Andn n n n n n n n Wherein R 1 is a hydrogen atom or a methyl groupn n n R 2 is methyl or ethyln n n R 3 means a lower alkyl group having 1-4 carbon atoms)n n n (b) about 10-60 mole percent of the hydroxyl groups are mixtures consisting of polyhydroxystyrene substituted with tert-butoxycarbonyloxy groups.n n n The composition has a high sensitivity, high resolution, high flame resistance, good width characteristics at a depth of focus and good post-exposure storage stability, good storage stability as a resist solution, and a resist pattern having a good profile without dependence on the substrate to which it is applied. To give.n n n This composition can be advantageously used for micropattern formation in ultra-LSI production. |
priorityDate | 1994-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 245.