http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0150942-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eccd894c99fea2d1c0c8735872bb2309 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F5-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-547 |
| filingDate | 1998-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d95e2af12b831edb3dc2c5cb69bdd74f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cd7f888956f5d8a950632252ab81428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_192c38ac826b1a10e854f462723ce13c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_222225925190f2d2afacfaa804274702 |
| publicationDate | 1998-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0150942-B1 |
| titleOfInvention | Formation method of thin film using cyclic organic metal compound |
| abstract | The present invention provides a method for forming a thin film on a substrate by gas phase deposition of a metal from an organometallic compound, using the cyclic organometallic compound of the formula (1) as the organometallic compound.n n n n n n n n n n Wheren n n M is aluminum, gallium or indium,n n n n is 1, 2, 3, 4, 5 or 6,n n n X is-(CHR 4 ) m- (wherein m is 1, 2, 3, 4 or 5),n n n o- (CH 2 ) p -C 6 H 4- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 6 H 10- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 6 H 8- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 6 H 6- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 5 H 8- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 5 H 6- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 5 H 4- (CH 2 ) q- ,n n n o- (CH 2 ) p -C 4 H 6- (CH 2 ) q- ,n n n If Y is -F, -CF 3 , -C 2 F 5 , -C 3 F 7 or -C 4 F 9 is a single bond,n n n p and q are each, independently of each other, 0, 1, 2 or 3,n n n R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an alkyl group having 1 to 4 carbon atoms,n n n Y is -NR 5 R 6 , -PR 5 R 6 , -AsR 5 R 6 , -SbR 5 R 6 , -F, -CF 3 , -C 2 F 5 , -C 3 F 7 or -C 4 F 9 ego,n n n R 5 and R 6 are each independently of each other an alkyl group having 1 to 8 carbon atoms in which the alkyl moiety can be partially or wholly fluorinated, or in each case a cycloalkyl group or alkenyl group or cycloalkenyl group or phenyl group having 3 to 8 carbon atoms.n n n The present invention provides a metal alkyl compound that is simple to handle, stable at room temperature, and capable of decomposing from the gas phase, that is, a compound suitable for various gas phase deposition methods. |
| priorityDate | 1988-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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