http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0140731-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad78530ba8fb4c37404948f0d00fb7f7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 |
| filingDate | 1994-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fec7690b4495aa13f4e0192fa76e75b |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0140731-B1 |
| titleOfInvention | Method of forming uneven structure of semiconductor device |
| abstract | The present invention relates to a method of forming a concave-convex structure of a semiconductor device. In particular, a doped oxide film is deposited on a concave-convex structure forming part to easily form a microstructure that can be used in a highly integrated semiconductor device by using an impurity-doped film, and an oxide film inside By dissipating out of the doped oxide film contained in the doped impurities contained in the doped uneven structure acts as a nucleus when depositing the uneven structure forming film, the deposition is activated to facilitate the formation of the uneven structure, thereby increasing the surface area in the manufacturing of devices such as capacitors It is a method of forming a concave-convex structure that can increase the capacity and enable high integration of semiconductor devices. |
| priorityDate | 1994-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.