http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0140652-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1994-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06a5864f80914cc5cf48930ec6905fbe |
| publicationDate | 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0140652-B1 |
| titleOfInvention | Cleaning Method of Semiconductor Substrate |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor substrate that removes organic substances, metal ions, and natural oxide films remaining on the surface of the semiconductor substrate. In particular, in a wafer cleaning prior to gate oxidation, a natural oxide film not completely removed by a hydrogen fluoride solution dip process is disclosed. The present invention relates to a method for cleaning a semiconductor substrate in which anhydrous hydrogen fluoride is removed and residual fluorine is removed using a xenon plasma. As described above, the present invention provides a cleaning method for gate oxidation pretreatment of a semiconductor substrate, which comprises a piranha cleaning step for removing organic substances, a gas cleaning step for removing a native oxide film using hydrogen fluoride, and removal of fluorine ions remaining on the substrate. To dry the substrate by exposing the substrate to xenon lamp plasma, and hydrochloric acid cleaning to remove the metal ions. |
| priorityDate | 1994-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.