http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0127999-B1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02
filingDate 1997-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1998-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffd990afe546782844bca14c848403e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e334bf43c5c74612c3ab052ef9bf61d
publicationDate 1998-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-0127999-B1
titleOfInvention Semiconductor device having substrate made of silicon crystal and manufacturing method thereof
abstract SUMMARY OF THE INVENTION The present invention provides a semiconductor device having a substrate manufactured by using a silicon crystal of low hydrogen concentration having a small defect resulting from oxygen precipitation generated during a heat treatment process, and a method of manufacturing the same. In particular, a silicon crystal containing a hydrogen concentration of 0.55 × 10 cm −3 or less having a small dependence of hydrogen concentration and a small defect density may be used as a substrate of a semiconductor device. Low-hydrogen silicon substrates are prepared by measuring the hydrogen concentration in silicon-doped silicon-doped hydrogen-doped silicon crystals and comparing the measured hydrogen concentrations, where both silicon crystals are identical to produce ten donors Heat-treated under the conditions.
priorityDate 1993-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.