http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0127691-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| filingDate | 1994-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aaf840103bfa4014196d13f1bee7c9e |
| publicationDate | 1997-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0127691-B1 |
| titleOfInvention | Transistors and manufacturing methods thereof |
| abstract | The present invention improves the punch-through characteristics by further distance from the drain region, which enables the point where the source meets the depletion region of the source when the depletion region is extended due to the voltage applied to the drain, and improves the punch-through characteristic, The present invention relates to a transistor having an effect of enabling high integration of a device by improving punchthrough characteristics and increasing a saturation current value per unit device width in a state in which a finer pattern line width is formed without an increase, and a method of manufacturing the same. |
| priorityDate | 1994-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.