http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0126103-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 1994-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1997-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4db4c79b230a325aab9780d4a4e8a35 |
| publicationDate | 1997-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0126103-B1 |
| titleOfInvention | Insulation Planarization Method |
| abstract | The present invention provides a method of planarizing an insulating film 44 having a topology during a semiconductor manufacturing process by chemical mechanical polishing; Applying a chemical solution (45) on the insulating film (44) that is not mixed with the slurry used during chemical mechanical polishing before the chemical mechanical polishing; Rotating the wafer to flow the chemical solution (45); The method for planarizing an insulating film comprising the step of planarizing the insulating film 44 by chemical mechanical polishing. Since the planarization process can be performed by CMP technology to fine holes or trenches, the semiconductor device can be secured by securing a subsequent process margin. There is an effect of improving the reliability and yield. |
| priorityDate | 1994-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.