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filingDate 2019-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2021053756-A1
titleOfInvention Semiconductor device manufacturing methods, substrate processing devices and programs
abstract (A) A step of supplying a first raw material gas containing a first element to a substrate in a processing chamber, and (b) a process of supplying a first element to a substrate and having a lower thermal decomposition temperature than the first raw material gas. By performing a cycle of supplying the second raw material gas and (c) supplying the reaction gas containing the second element different from the first element to the substrate in this order a predetermined number of times, the substrate Above, there is provided a technique having a step of forming a film containing the first element and the second element.
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