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filingDate 2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2020179474-A1
titleOfInvention Semiconductor device manufacturing method, substrate processing method, program and substrate processing equipment
abstract To improve membrane properties. A supply process in which a metal-containing gas is supplied and a reduction gas containing silicon and hydrogen and not halogen is performed in parallel to the substrate in the processing chamber, and an exhaust process for exhausting the atmosphere in the processing chamber are performed. After repeating the first step, the first step multiple times, and the first step multiple times, the supply of the nitrogen-containing gas to the substrate in the treatment chamber and the exhaust of the atmosphere in the treatment chamber. It has a second step of performing the above steps and a step of repeating the second step a plurality of times.
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