| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2020-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2020175427-A1 |
| titleOfInvention |
Semiconductor device manufacturing methods, substrate processing devices and programs |
| abstract |
Provided is a technique for improving the film thickness uniformity of a metal oxide film formed on a substrate. The steps of (a) supplying the metal-containing gas to the substrate in the processing chamber and (b) setting the flow velocity of the oxygen-containing gas to the substrate in the processing chamber to be 7.0 m / s or more and 8.5 m / s or less. Provided is a technique comprising a step of supplying an oxygen-containing gas with a partial pressure of the oxygen-containing gas of 9.0 Pa or more and 12.0 Pa or less. |
| priorityDate |
2019-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |