| abstract |
PROBLEM TO BE SOLVED: To provide a film-forming composition suitable as a resist underlayer film forming composition capable of forming a Si-containing resist underlayer film having both good EUV resist adhesion and good etching processability due to a high fluorine-based etch rate. To provide. SOLUTION: For example, a film-forming composition containing a polymer represented by the formula (E1) and a solvent. [Chemical 1] [Selection diagram] None |