| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M2004-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M2004-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-1391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G11-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-485 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G11-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-0568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-052 |
| filingDate |
2019-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-WO2020105603-A1 |
| titleOfInvention |
Method for manufacturing metal compound particle group, electrode for power storage device, power storage device, and metal compound particle group |
| abstract |
Provided are a metal compound particle group capable of suppressing an increase in internal resistance of a power storage device, an electrode for a power storage device including the metal compound particle group, and a method for producing the metal compound particle group. It is a metal compound particle group having a three-dimensional network structure in which metal compound particles are connected, and a coat layer C containing a silicon oxide is formed in a part of the metal compound particle group. The coat layer C containing the silicon oxide is formed on at least a part of the surface of the metal compound particles. Voids 2 are present in the three-dimensional network structure, and a coat layer C containing a silicon oxide is formed on the surface of the metal compound particles that define the voids 2. The silicon oxide contained in the coat layer C is an amorphous silicon oxide. |
| priorityDate |
2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |