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filingDate 2019-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2020039864-A1
titleOfInvention Organic thin film transistor and manufacturing method of organic thin film transistor
abstract Provided are an organic thin film transistor having high flexibility and high atmospheric stability, and a method for manufacturing the organic thin film transistor. A transistor element having a gas barrier layer composed of a resin layer and an inorganic layer, a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode formed on one main surface side of the gas barrier layer, and a transistor element. The gas barrier layer has a sealing layer laminated on the opposite side of the gas barrier layer via an adhesive layer, and the thickness of the resin layer of the gas barrier layer is thinner than the thickness from the inorganic layer to the sealing layer of the gas barrier layer.
priorityDate 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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