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filingDate 2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2020027243-A1
titleOfInvention Crystal structure compounds, oxide sintered bodies, sputtering targets, crystalline oxide thin films, amorphous oxide thin films, thin film transistors, and electronic devices
abstract A crystal structure compound represented by the following composition formula (2) and having a diffraction peak in the range of the incident angle (2θ) observed by the X-ray (Cu—Kα ray) diffraction measurement specified in the following (A) to (K). A. (In x Ga y Al z) 2 O 3 ···· (2) (In the formula (2), 0.47 ≦ x ≦ 0.53, 0.17 ≦ y ≦ 0.43, 0.07 ≦ z ≦ 0.33, x + y + z = 1.) 31 ° to 34 ° ... (A), 36 ° to 39 ° ... (B), 30 ° to 32 ° ... (C), 51 ° to 53 ° ... (D), 53 ° ~ 56 ° ... (E), 62 ° ~ 66 ° ... (F), 9 ° ~ 11 ° ... (G), 19 ° ~ 21 ° ... (H), 42 ° ~ 45 ° ... (I), 8 ° to 10 ° ... (J), 17 ° to 19 ° ... (K)
priorityDate 2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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