http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019181873-A1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-38 |
filingDate | 2019-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2019181873-A1 |
titleOfInvention | Silicon-containing resist underlayer film forming composition containing a protected phenol group and nitric acid |
abstract | 【Task】 Provided is a resist underlayer film forming composition for lithography that can be used in the manufacture of a semiconductor device, and provides a resist underlayer film forming composition for lithography for forming a resist underlayer film that can be used as a hard mask. SOLUTION: The hydrolyzable silane (a) contains a hydrolyzable condensate (c) of the hydrolyzable silane (a) as a silane, nitrate ions and a solvent, and the hydrolyzable silane (a) is of the formula (1): [Chemical 1] [In equation (1), R 1 is equation (2): [Chemical 2] It is an organic group of the above and is bonded to a silicon atom by a Si—C bond. ] The resist underlayer film forming composition for lithography containing the hydrolyzable silane. It further comprises a hydrolyzable silane (a) and / or a hydrolyzate thereof (b). Nitrate ion is contained in the resist underlayer film forming composition in the range of 1 ppm to 1000 ppm. Hydrolyzed condensate (c) is a 1% to 100% as the molar ratio of the functional groups of the formula (2) in the hydrolyzable silane (a hydrogen atom) / (hydrogen atoms + R 5 group) of the formula (1) is there. [Selection diagram] None |
priorityDate | 2018-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID466754096 |
Total number of triples: 21.