| abstract |
An object of the present invention is to provide a polishing liquid and a chemical mechanical polishing method, which have high selectivity for polishing silicon nitride with respect to silicon oxide and are less likely to cause defects on the surface to be polished when applied to CMP. The polishing liquid is a polishing liquid containing colloidal silica used for chemical mechanical polishing, and the zeta potential of the colloidal silica measured in the state of being present in the polishing liquid is −20 mV or less, and electrical conduction is achieved. The degree is 200 μS / cm or less, the pH is 2 to 6, and the transmittance is 70 to 99%. |