| abstract |
Silicon for forming a silicon-containing layer that has an antireflection function during exposure in the multilayer resist method, has a high etching rate for fluorine-based gas plasma during dry etching, and is slow for oxygen-based gas plasma. A layer-containing composition is provided. A silicon-containing layer-forming composition containing a polysiloxane compound (A) containing a structural unit represented by the formula (1) and a solvent (B). [(R 1 ) b R 2 m SiO n / 2n / 2 ] (1) [In the formula, R 1 is a group represented by the following formula. [Chemical 21] (A is an integer from 1 to 5. Wavy lines indicate that the intersecting line segments are bonds.) R 2 is independently a hydrogen atom, an alkyl group having 1 or more and 3 or less carbon atoms, a phenyl group, a hydroxy group, an alkoxy group having 1 or more carbon atoms and 3 or less carbon atoms, or a fluoroalkyl group having 1 or more carbon atoms and 3 or less carbon atoms. , B is an integer of 1 to 3, m is an integer of 0 to 2, n is an integer of 1 to 3, and b + m + n = 4. ] |