http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019082934-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-3442 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-08 |
| filingDate | 2018-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2019082934-A1 |
| titleOfInvention | A method for manufacturing a semiconductor device using a silicon-containing resist underlayer film forming composition containing an organic group having an ammonium group. |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using a resist underlayer film forming composition which has a high etching rate and can be removed with a chemical solution after substrate processing. SOLUTION: A resist underlayer film forming composition containing a hydrolyzable condensate obtained by hydrolyzing and condensing hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid is used, and after being transferred to the lower layer, it is peroxidized. A resist film patterned with hydrogen peroxide and sulfuric acid hydrolyzate (SPM) and / or a hydrogen peroxide solution and ammonia water mixture (SC1), a patterned resist underlayer and / or A method for manufacturing a semiconductor device including a step (G) of removing particles. The hydrolyzable silane has the formula (1): [Chemical 1] (In the formula (1), R 1 represents an organic group having a primary amino group, a secondary amino group, or a tertiary amino group, and is bonded to a silicon atom by a Si—C bond. Includes hydrolyzable silane represented by) The hydrolyzed condensate contains an organic group having a salt structure of a counter anion derived from a strong acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group. [Selection diagram] None |
| priorityDate | 2017-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.