| abstract |
Provided is a semiconductor device having good electrical characteristics. A semiconductor device having an oxide in a channel forming region, the semiconductor device is an oxide on a substrate, a first insulator on the oxide, and a second insulator on the first insulator. It has a body, a third insulator, and a conductor on the third insulator, and has a region in contact with the oxide and the first insulator, and has a region in contact with the first insulator. , The second insulator and the second insulator are provided with an opening for exposing the oxide, the third insulator is arranged so as to cover the inner wall and the bottom surface of the opening, and the conductor is arranged so as to embed the opening. The conductor has a region that overlaps with the oxide through the third insulator, and the first insulator contains an element other than the main component of the oxide. |