| abstract |
An object of the present invention is to provide a processing solution for patterning a resist film and a pattern formation method capable of simultaneously achieving suppression of defect generation on a pattern and improvement of a bridge defect of a pattern. In the pattern forming method of the present invention, a resist film is formed on a substrate using a resist composition containing at least a resin whose polarity is increased by the action of an acid, a photoacid generator, and a solvent, and the resist film is exposed. And then processing the exposed resist film with a processing solution to form a pattern, wherein the processing solution contains two or more types of organic solvents, and at least one of the two or more types of organic solvents. The content of the organic solvent having a boiling point of 120 to 155 ° C. and a boiling point of 120 to 155 ° C. is 45% by mass or more based on the total mass of the treatment liquid, and two or more kinds of organic solvents The difference between the boiling point of the highest boiling organic solvent and the boiling point of the lowest boiling organic solvent is less than 49.degree. |