http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018061109-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate | 2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018061109-A1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | Problem When a metal film is formed using a fluorine-containing metal source gas on a substrate having an insulating film and a barrier film formed on the insulating film on the surface, diffusion of fluorine into the insulating film is suppressed. Provide technology. A step of supplying an oxidizing gas to a substrate having a metal nitride film containing a first metal element formed on an insulating film to oxidize the surface of the metal nitride film to form a metal oxide layer; Supplying the second metal element and fluorine-containing metal source gas containing fluorine to the substrate to form a metal film on the substrate, and forming the metal film, Supplying a first reducing gas and the fluorine-containing metal source gas to the substrate to form a metal core layer containing a second metal element on the substrate; And a step of forming a metal bulk layer on the metal nucleus layer using a second reducing gas and the fluorine-containing metal source gas. |
| priorityDate | 2016-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.