http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018061064-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
filingDate | 2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2018-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2018061064-A1 |
titleOfInvention | Resist stripper |
abstract | In a manufacturing process of a semiconductor device or the like, curing is performed at a higher temperature than in the past to avoid poor curing of the resist. Therefore, a stripping solution having a stronger stripping force than before is required. Secondary amine, 1,3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, water, hydrazine as an additive, the water is 10.0 mass% or more 31.0 mass% The resist stripping solution characterized by being less than the above can strip the resist baked at a high temperature and does not cause corrosion on the film surface or cross section. |
priorityDate | 2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.