http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018061064-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
filingDate 2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2018061064-A1
titleOfInvention Resist stripper
abstract In a manufacturing process of a semiconductor device or the like, curing is performed at a higher temperature than in the past to avoid poor curing of the resist. Therefore, a stripping solution having a stronger stripping force than before is required. Secondary amine, 1,3-dimethyl-2-imidazolidinone (DMI) as a polar solvent, water, hydrazine as an additive, the water is 10.0 mass% or more 31.0 mass% The resist stripping solution characterized by being less than the above can strip the resist baked at a high temperature and does not cause corrosion on the film surface or cross section.
priorityDate 2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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