http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018037763-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1818 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D133-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K9-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L33-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-00 |
| filingDate | 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018037763-A1 |
| titleOfInvention | Actinic light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin |
| abstract | Provided is an actinic ray-sensitive or radiation-sensitive resin composition or the like which has a high follow-up property of immersion liquid and can reduce scum and development defects even when the scanning speed of exposure is ultra-high. The actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by the general formula (1). The pattern formation method includes the step of forming a film with an actinic ray sensitive or radiation sensitive resin composition, and the method of manufacturing an electronic device includes the pattern formation method. In General Formula (1), Z represents a halogen atom, a group represented by R 11 OCH 2- , or a group represented by R 12 OC (= O) CH 2- . R 11 and R 12 represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n + 1) -valent linking group. R represents a group having a group which is decomposed by the action of an alkali developer to increase the solubility in the alkali developer. n represents a positive integer. |
| priorityDate | 2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 257.