http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018034179-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate | 2017-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018034179-A1 |
| titleOfInvention | Gas barrier film, method for producing the same, and electronic device provided with the same |
| abstract | The object of the present invention is to provide a gas barrier film having an improved gas barrier property per unit thickness than a gas barrier film when a silicon compound is used, a method for producing the same, and an electronic device provided with the same. It is. The gas barrier film of the present invention is a gas barrier film containing silicon (Si) and the element M of group 5 of the long period periodic table, and the gas barrier film has a Si-M bond. It is characterized by having. |
| priorityDate | 2016-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.