http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2018030311-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-10 |
| filingDate | 2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2018030311-A1 |
| titleOfInvention | Conductive C-plane GaN substrate |
| abstract | At room temperature, the resistivity is 2 × 10 −2 Ωcm or less or the n-type carrier concentration is 1 × 10 18 cm −3 or more, and further at least one of the main surfaces under the following conditions (A1) and (B1) A conductive C-plane GaN substrate capable of drawing at least one first line segment which is a virtual line segment of 40 mm in length filling at least one side can be preferably used for the manufacture of a nitride semiconductor device and the like. (A1) When the XRC incidence plane in each ω scan is made parallel to the first line segment and the XRC of the reflection is measured at 1 mm intervals between all measurement points on the first line segment (A1) The maximum value of FWHM of XRC is less than 30 arcsec; (B1) When measuring the XRC of the (004) reflection at 1 mm intervals, with the X-ray incident surface in each ω scan parallel to the first line segment on the first line segment, between all the measurement points The difference between the maximum value and the minimum value of the peak angle of XRC is less than 0.2 °. |
| priorityDate | 2016-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.